Enabling Static Random-Access Memory Cell Scaling with Monolithic 3D Integration of 2D Field-Effect Transistors

Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors

Static Random-Access Memory (SRAM) cells are fundamental in computer architecture, serving crucial roles in cache memory, buffers, and registers due to their high-speed performance and low power consumption. However, scaling SRAM cells to advanced technology nodes poses significant challenges. Three-dimensional (3D) integration offers a promising solution for reinstating SRAM scaling by vertically stacking devices, thereby reducing the physical …

SRAM Cell Scaling With Monolithic 3D Integration Of 2D FETs (Penn State)

A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State University. Abstract “Static Random-Access Memory (SRAM) cells are fundamental in computer architecture, serving crucial roles in cache memory, buffers, and registers due to their high-speed performance and low power consumption. However, scaling SRAM…