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RRAM: Transforming Memory Solutions For AI-driven IoT Devices And Embedded Systems

Artificial Intelligence (AI) and Machine Learning (ML) applications are driving increased demand for high-performance, low-power memory solutions across consumer, medical, and industrial markets. These applications require efficient, Non-Volatile Memory (NVM) to process, store, and retain large volumes of data, as well as support frequent Firmware Over-The-Air (FOTA) updates. In the consumer space, remote FOTA updates mitigate security vulnerabi…Artificial Intelligence Read Article

Agentic AI: Lots Of Little Black Boxes

AI is changing so quickly that it’s not always clear how much of a security threat it poses for semiconductor design, and that uncertainty increases as AI agents are introduced into the mix. So far, the use of AI in chip design has been highly targeted. Most of what is included in design tools is some version of machine learning, bounded by tight control loops. EDA and IP vendors, large chipmakers, and systems companies are researching and exper…Artificial Intelligence · Mountain View Read Article

SDVs And AI Forcing Big Changes In Automotive

The automotive industry is undergoing a fundamental transformation that includes everything from software-defined vehicles, the injection of AI into nearly every facet of the design and use case of a vehicle, and a complete overhaul of traditional relationships between different tiers and OEMs. The switch to software-defined vehicles is a top priority for the automotive ecosystem. It enables faster time-to-market and faster updates, keeping vehi…Artificial Intelligence · United States Read Article

Noise Margin Enhancing ULVR SRAM Cell (Tokyo Institute of Technology)

A new technical paper titled “A New Ultralow-Voltage Retention SRAM Cell Enhancing Noise Immunity” was published by researchers at the Tokyo Institute of Technology. Excerpt “A new ultralow-voltage retention (ULVR) SRAM cell is proposed, which can highly enhance the noise margin (NM) for the ULVR mode at ultralow voltages (VUL). This 8T cell is configured with newtype Schmitt-trigger (ST) inverters that can nearly maximize the hysteresis width o…Tokyo, Japan · Tokyo Read Article

Blog Review: Aug. 6

Cadence’s Shyam Sharma checks out key features of the LPDDR6 specification, including data transfer speeds that can reach up to 14.4Gbps, two sub-channels per device, metadata built into the data packets, and row hammer mitigation. Synopsys’ Frank Malloy and Vincent van der Leest describe the essential role that a hardware root of trust plays in providing a secure foundation for all other security operations within a system and ensuring that eve…Arm Read Article

Epitaxial Growth Of Up To 120 Si/SiGe Bilayers In View of 3D DRAM Applications (imec, Ghent Univ.)

A new technical paper titled “Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications” was published by researchers at imec and Ghent University. Abstract “Epitaxially grown Si/Si1−xGex multi-stacks with ≥100 bilayers (≥200 sublayers) are being considered for three dimensionally vertically stacked dynamic random access memory devices. Because of the lattice mismatch between S…Ghent · Ghent Read Article

News from Semiconductor Engineering

News from Semiconductor Engineering