US EditionAlN RF developer EasyGaN closes
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AlN RF developer EasyGaN closes
French aluminium nitride (AN) startup EasyGaN has closed after it failed to raise additional funding. The company, based in Sophia Antipolis, was developing AlN layers on silicon wafers using molecular beam epitaxy (MBE) which offers more precise control of the structure of the materials than other techniques. First 4in single crystal AlN wafer The technology […] The post AlN RF developer EasyGaN closes appeared first on eeNews Europe.
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