Unlocking the Complete Power of Multiferroic Materials for Next-Generation

Exploiting the Full Potential of Multiferroic Materials for Magnetic Memory Devices - Semiconductor Digest

Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, opening pathways to more energy-efficient electronics.

Unlocking the Complete Power of Multiferroic Materials for Next-Generation

In a remarkable advancement for the realm of magnetic memory technologies, researchers at the Institute of Science Tokyo have unveiled a groundbreaking discovery regarding the behavior of multiferroic materials. Led by Assistant Professor Kei Shigematsu and Specially Appointed Associate Professor Hena Das, this innovative study challenges long-standing assumptions about the mechanisms of magnetization in such materials. By revealing that magneti…