Strategies For Reducing The Effective GaN/Diamond TBR

Strategies For Reducing The Effective GaN/Diamond TBR

A new technical paper titled “Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications” was published by researchers at University of Bristol, Cardiff University and Akash Systems. Abstract “GaN high electron mobility transistors (HEMTs) on SiC substrates are the highest performing commercially available transistors for high-power, high-frequency applications. However, Joule self-heating lim…