US EditionR&D: Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory
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R&D: Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory
ACS Applied Materials & Interfaces has published an article written by Geonhui Han, Jongseon Seo, Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea, Junghoon Park, Minji Hong, Juhyung Kim, Kilho Leen, Wanki Kim, Daewon Ha, Samsung Electronics, Semiconductor R&D Center, […] The post R&D: Strategic Material Design for Highly Re…
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