US EditionVishay Unveils Next-Gen SiC Schottky Diodes for High-Efficiency Power Designs
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Vishay Unveils Next-Gen SiC Schottky Diodes for High-Efficiency Power Designs
MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new series of advanced silicon carbide (SiC) Schottky diodes aimed at boosting efficiency in high-speed, hard-switching power systems. The launch includes three Gen 3 devices — the 1 A VS-3C01EJ12-M3 and 2 A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 — all housed in Vishay’s compact SlimSMA HV (DO-221AC) package. Designed with a merged PIN Schottky (MPS) structure, these diodes deliv…
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