Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection

Flash of the Future: New Memory Breakthrough in China Rivals RAM

The record-breaking chip could power future AI systems, and may be ready for industry use within five years.

Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection

The pursuit of non-volatile memory with program speeds below one nanosecond, beyond the capabilities of non-volatile flash and high-speed volatile static random-access memory, remains a longstanding challenge in the field of memory technology1. Utilizing fundamental physics innovation enabled by advanced materials, series of emerging memories2–5 are being developed to overcome the speed bottleneck of non-volatile memory. As the most extensively …

Subnanosecond Flash Memory via 2D Injection

In a groundbreaking development poised to revolutionize the field of non-volatile memory technologies, researchers have harnessed the unique properties of two-dimensional (2D) materials to shatter long-standing speed barriers of flash memory devices. By innovatively exploiting the atomic-scale thickness of 2D structures, the team demonstrated a novel mechanism termed 2D-enhanced hot-carrier injection (2D-HCI), effectively enabling program speeds…