US EditionSK hynix Develops UFS 4.1 Solution Based on 321-High NAND
- SK hynix announced on May 21, 2025 in Seoul the development of a UFS 4.1 solution product based on 321-layer 4D NAND flash for mobile use.
- The development responds to rising demand for NAND solutions with high performance and low power to support stable on-device AI operation in smartphones.
- The product supports a fastest 4300MB/s sequential read speed, improves random read by 15% and write by 40%, has 7% better power efficiency, and reduced thickness by 15% to 0.85mm for slim devices.
- It will be available in 512GB and 1TB capacities, optimized for AI workloads, and designed to fit ultra-slim flagship smartphones, demonstrating best-in-class performance with low power consumption.
- SK hynix aims to finalize the development of a high-density 4D NAND SSD this year, designed to serve both consumer markets and data center applications, strengthening its role as a comprehensive AI memory solutions provider with cutting-edge products.
56 Articles
56 Articles
SK hynix develops new flash storage chip using 321-layer NAND
SK hynix said Thursday it has developed a mobile universal flash storage (UFS) chip based on the world's highest 321-layer 1 terabit NAND flash technology, delivering faster, more power-efficient data...
SK hynix Develops UFS 4.1 Solution Based on 321-High NAND
Optimized for on-device AI with best-in-class sequential reading performance, low power requirementThickness reduced by 15% to fit into ultra-slim flagship smartphonesPortfolio with world's highest 321-layer product to enhance SK hynix's leadership as full stack AI memory provider
SK Hynix unveils 321-layer UFS 4.1 that is faster, thinner and more efficient than the previous gen
Memory maker SK hynix has announced the world’s first 321-layer UFS 4.1 TLC NAND flash for smartphones. It’s faster, more efficient and thinner to boot – perfect for the next generation of phones that will focus on slim builds and AI tools, says the company. Compared to the previous generation (which used a 238-layer design) from 2022, these new storage chips have 15% higher random read and 40% higher random write speeds. For sequential reads, t…
SK Hynix Develops UFS 4.1 Solution with 321-Layer NAND
SK hynix Inc. announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1 Tb triple level cell 4D NAND flash for mobile applications. The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the…
SK hynix Develops UFS 4.1 Solution Based on 321-High NAND - IT News Direct
Optimized for on-device AI with best-in-class sequential reading performance, low power requirement Thickness reduced by 15% to fit into ultra-slim flagship smartphones Portfolio with world’s highest 321-layer product to enhance SK hynix’s leadership as full stack AI memory provider SEOUL, South Korea, May 21, 2025 /PRNewswire/ — SK hynix Inc. (or “the company”, www.skhyni) announced today that it has developed UFS 4.1 solution product adopting …
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