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Scientists Achieve Record Conductivity in Silicon Chip Material
Researchers developed a nanometre-thin germanium-on-silicon material with hole mobility of about 7.15 million cm²/Vs, surpassing industrial silicon conductivity.
- On November 24, Materials Today published that University of Warwick Semiconductors Research Group and National Research Council of Canada measured record hole mobility of 7.15 million cm2/Vs in nanometre-thin compressively strained germanium-on-silicon material.
- Faced with silicon's limits, researchers revived germanium for its superior properties and compatibility with mainstream silicon manufacturing to enable faster, lower-power electronics.
- Using a nanometre-thin germanium layer on silicon, the team grew a nanometre-thin compressively strained germanium epilayer and applied precise compressive strain to produce an ultra-clean crystal, Dr Maksym Myronov said.
- Dr Sergei Studenikin, Principal Research Officer, said 'This sets a new benchmark for charge transport in group-IV semiconductors', marking a major milestone for Warwick and reinforcing UK leadership.
- Researchers highlight potential uses in quantum information processing, spin qubits, cryogenic controllers, AI and data-centre hardware, as the material could enable faster, energy-efficient future chips and quantum devices.
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Scientists achieve record-breaking electrical conductivity in new quantum material
Scientists at the University of Warwick and the National Research Council of Canada have achieved and measured the highest “hole mobility” ever recorded in a silicon-compatible material.
·Washington, United States
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Record-setting charge mobility in germanium-silicon material points to energy-saving quantum chips
Most modern semiconductors are fabricated of or on silicon (Si), but as devices get smaller and denser, they dissipate more power and, as a result, are reaching their physical limits. Germanium (Ge)—once used in the first transistors of the 1950s—is now making a comeback as researchers find new ways to harness its superior properties while keeping the benefits of silicon's established manufacturing technologies.
·United Kingdom
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Hole mobility in compressively strained germanium on silicon exceeds 7 × 106 cm2V-1s−1
·Amsterdam, Netherlands (Kingdom of the)
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