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Scaling Nanoribbon Transistors Based on Monolayer 2D Semioconductors (Stanford, HORIBA, SLAC)
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Scaling Nanoribbon Transistors Based on Monolayer 2D Semioconductors (Stanford, HORIBA, SLAC)
A new technical paper titled “Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides” was published by researchers at Stanford University, HORIBA Scientific, and SLAC National Accelerator Laboratory. Abstract “Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, goo…
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