US EditionR&D: Phase-Change Memory, A Historic Perspective
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R&D: Phase-Change Memory, A Historic Perspective
physica status solidi (RRL) – Rapid Research Letters has published an article written by Mattia Boniardi, and Andrea Redaelli, Technology R&D, STMicroelectronics, via C. Olivetti 2, 20864 Agrate Brianza, Italy. Abstract: “The phase-change memory (PCM) technology is one of the most studied emerging technologies for both the stand-alone and embedded memory markets. It is based on […] The post R&D: Phase-Change Memory, A Historic Perspective appear…
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