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R&D: New Era of Ferroelectric Thin Films for Nonvolatile Memories
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R&D: New Era of Ferroelectric Thin Films for Nonvolatile Memories
MRS Bulletin has published an article written by Susan Trolier-McKinstry, Materials Science and Engineering Department and Materials Research Institute, The Pennsylvania State University, University Park, USA, Ken Uchida, Department of Materials Engineering, The University of Tokyo, Tokyo, Japan, and Tomoaki Yamada, Department of Energy Engineering, Nagoya University, Nagoya, 464-8603, Japan, and MDX Research Center for […] The post R&D: New Era…
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