US EditionNoise Margin Enhancing ULVR SRAM Cell (Tokyo Institute of Technology)
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Noise Margin Enhancing ULVR SRAM Cell (Tokyo Institute of Technology)
A new technical paper titled “A New Ultralow-Voltage Retention SRAM Cell Enhancing Noise Immunity” was published by researchers at the Tokyo Institute of Technology. Excerpt “A new ultralow-voltage retention (ULVR) SRAM cell is proposed, which can highly enhance the noise margin (NM) for the ULVR mode at ultralow voltages (VUL). This 8T cell is configured with newtype Schmitt-trigger (ST) inverters that can nearly maximize the hysteresis width o…
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