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Infineon First to Integrate Schottky Diode Into Industrial GaN Transistor

Summary by allaboutcircuits.com
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse body diode.
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Startups Magazine | Digital & Print Magazine For Tech StartupsStartups Magazine | Digital & Print Magazine For Tech Startups

Bridgio and Infineon unveil second wave of hardware innovation

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allaboutcircuits.comallaboutcircuits.com

Infineon First to Integrate Schottky Diode Into Industrial GaN Transistor

The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse body diode.

Read Full Article
ddaily.co.krddaily.co.kr

Infineon Launches Industrial GaN Transistors with Integrated Schottky Diodes

[Digital Daily Reporter Kim Moon-ki] Infineon Technologies (CEO Lee Seung-soo) announced on the 16th that it has launched an industrial-grade GaN (gallium nitride) power transistor with an integrated Schottky diode. The G5 family of medium-voltage CoolGaN transistors with an integrated Schottky diode improves the performance of power systems by reducing unnecessary deadtime losses and further increases overall system efficiency. This integrated…

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ddaily.co.kr broke the news in on Wednesday, April 16, 2025.
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