US EditionImec Achieves Record-Breaking RF GaN-on-Si Transistor Performance For High-Efficiency 6G Power Amplifiers - Data Intelligence
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Imec Achieves Record-Breaking RF GaN-on-Si Transistor Performance For High-Efficiency 6G Power Amplifiers - Data Intelligence
Imec, a research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement-mode (E-mode) device operating at low supply voltage. In parallel, imec also demonstrated a re…
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