US EditionGAA NS ML And BL MoS2 FETs With Various Metal Contacts Of Source/Drain Contact
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GAA NS ML And BL MoS2 FETs With Various Metal Contacts Of Source/Drain Contact
A new technical paper titled “Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts” was published by researchers at National Yang Ming Chiao Tung University. Abstract “This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) MoS2 devices through density-functional-theory (DFT) calculation and device simulation. We begin by analyzing material properties and van der Waals gaps at metal…
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