Fraunhofer ISE developing InP-on-GaAs substrates for III-V solar cells

Fraunhofer ISE developing InP-on-GaAs substrates for III-V solar cells

Fraunhofer ISE researchers say their newly fabricated gallium arsenide substrates (InP-on-GaAs wafers) can replace prime indium phosphide wafers and offer a scalable pathway to lower costs.Scientists at the Fraunhofer Institute for Solar Energy Systems ISE have produced indium phosphide on InP-on-GaAs wafers up to 150 mm in diameter. Working in collaboration with German semiconductor specialists III/V-Reclaim, the team developed a process to dep…