US EditionCISM At Swansea Establishes UK’s First Capability For 4-inch Gallium Oxide Thin-film Growth
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CISM At Swansea Establishes UK’s First Capability For 4-inch Gallium Oxide Thin-film Growth
News: Suppliers 31 March 2025 CISM at Swansea establishes UK’s first capability for 4-inch gallium oxide thin-film growth The Centre for Integrated Semiconductor Materials (CISM) at Swansea University in South Wales has used a newly commissioned AIXTRON close-coupled showerhead (CCS) deposition system to establish the first capability in the UK for growing gallium oxide (Ga2O3) thin films on 4-inch substrates, which have been tested and shown to…
Swansea University starts 4inch gallium oxide line for power research
Swansea University in Wales has installed gallium tri-oxide (Ga2O3) deposition equipment at its Centre for Integrated Semiconductor Materials (CISM). In the β crystal form, Ga2O3 is an ultra-wide bandgap semiconductor ... The post Swansea University starts 4inch gallium oxide line for power research appeared first on Electronics Weekly.
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