Infineon Launches First Radiation-Hardened GaN Transistors for Space Missions, Earning Highest DLA Certification

Infineon Launches First Radiation-Hardened GaN Transistors for Space Missions, Earning Highest DLA Certification

Infineon Launches First Radiation-Hardened GaN Transistors for Space Missions, Earning Highest DLA Certification (IN BRIEF) Infineon Technologies has unveiled its first radiation-hardened Gallium Nitride (GaN) transistors, designed for space applications and certified to the highest reliability standards by the United States Defense Logistics Agency (DLA). The GaN High Electron Mobility Transistor (HEMT) devices offer superior efficiency, therma…

Infineon launches new radiation hardened GaN transistors, including one of the first DLA JANS certified GaN device – SatNews

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Lo…

Infineon Launches New Radiation Hardened GaN Transistors, Including One of the First DLA JANS Certified GaN Device - Semiconductor Digest

Infineon Technologies AG today announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to t…

JANS rad-hardened GaN hemt for space

Infineon Technologies has announced a rad-hardened GaN transistor designed to operate in harsh space environments. It “is the first in-house manufactured GaN transistor to earn the highest quality certification of ... The post JANS rad-hardened GaN hemt for space appeared first on Electronics Weekly.

Rad hard GaN HEMT transistors for space designs

Infineon Technologies has launched a family of radiation hardened Gallium Nitride (GaN) transistors built in-house at its own foundry. The GaN High Electron Mobility Transistor (HEMT) devices are based on Infineon’s CoolGaN technology and are certified for reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794. […] The post Rad hard GaN HEMT transistors for spa…