US EditionR&D: WOM-FTL, Efficient FTL for High-Density Flash Memory Through WOM-v Codes
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R&D: WOM-FTL, Efficient FTL for High-Density Flash Memory Through WOM-v Codes
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems has published an article written by Kai Tang; Jinhua Cui; Changhao Wen; Shiqiang Nie; Debin Liu; Yaliang Zhao, and Laurence T. Yang, Huazhong University of Science and Technology, China, Xi’an Jiaotong University, China, Zhengzhou University, China, and Henan University, China. Abstract: “High-density NAND flash memory, […] The post R&D: WOM-FTL, Efficient FTL for High…
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