US EditionR&D: Novel BTBT Erase-Based PUF Generation Method With High Throughput in 3-D NAND Flash Memory
Summary by StorageNewsletter
This story is only covered by news sources that have yet to be evaluated by the independent media monitoring agencies we use to assess the quality and reliability of news outlets on our platform. Learn more here.1 Articles
1 Articles
All
Left
Center
Right
R&D: Novel BTBT Erase-Based PUF Generation Method With High Throughput in 3-D NAND Flash Memory
IEEE Transactions on Electron Devices has published an article written by You-Liang Chou, C. C. Cheng, G. W. Wu, Y. W. Chang, W. J. Tsai, T. C. Lu, K. C. Chen, Macronix International Company Ltd, Hsinchu, Taiwan, T. E. Hsieh, T. H. Hou, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan, and […] The post R&D: Novel BTBT Erase-Based PUF Generation Method With High Throughput in 3-D NAND Flash Memory appeared first…
Coverage Details
Total News Sources1
Leaning Left0Leaning Right0Center0Last UpdatedBias DistributionNo sources with tracked biases.
Bias Distribution
- There is no tracked Bias information for the sources covering this story.
Factuality
To view factuality data please Upgrade to Premium
