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R&D : Five Articles on Phase Change Memories Technologies
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R&D : Five Articles on Phase Change Memories Technologies
R&D: Femtosecond laser irradiation of Ge-Rich Ge-Sb-Te in thin films and multilayer structures for phase-change memory Study demonstrates that femtosecond laser pulses can efficiently induce amorphization in Ge-rich Ge-Sb-Te (GGST) thin films and GST/GGST multilayer structures. Applied Surface Science has published an article written by Keerati Meeporn, Mathieu Abel, Walter Batista-Pessoa, Aix-Marseille University, CNRS, IM2NP […] The post R&D :…
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