onsemi Unveils Vertical GaN Semiconductors: A Breakthrough for AI and Electrification

onsemi Unveils Vertical GaN Semiconductors: A Breakthrough for AI and Electrification

Built on novel GaN-on-GaN technology, onsemi’s vertical GaN architecture sets a new benchmark for power density, efficiency and ruggedness...

onsemi unveils vertical GaN semiconductors to power the AI and EV energy revolution – Telematics Wire

Press Release, 31 October 2025 As global energy demand accelerates with the growth of AI data centers, electric vehicles, and renewable power systems, onsemi has announced a breakthrough in power semiconductor technology with its new vertical gallium nitride (vGaN) devices. Developed at the company’s Syracuse, New York facility, these GaN-on-GaN semiconductors redefine power density, efficiency, and ruggedness for next-generation energy systems.…

onsemi Unveils Vertical GaN Semiconductors

onsemi's vGaN technology is a breakthrough power semiconductor technology that sets a new benchmark for efficiency, power density and ruggedness for the age of AI and electrification. Developed and manufactured at onsemi's fab in Syracuse, NY, onsemi holds over 130 global patents covering a range of fundamental process, device design, manufacturing and systems innovations for vertical GaN technology. "Vertical GaN is a game-changer for the indu…

Onsemi announces vertical GaN power transitors

Onsemi has announced vertical GaN power devices, which it said are with early access customers in 700V and 1,200V form. “Developed and manufactured at Onsemi’s fab in Syracuse, New York, ... The post Onsemi announces vertical GaN power transitors appeared first on Electronics Weekly.