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NbAs Nanowires Show Lower Resistivity as Interconnect Dimensions Shrink (Cornell, NYCU, IBM et al.)

Researchers at Cornell University, National Yang Ming Chiao Tung University, IBM Research, Johns Hopkins University, et al. published a technical paper titled “Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects.” Abstract Excerpt: “ We report the synthesis of Weyl semimetal niobium arsenide (NbAs) nanowires through thermomechanical nanomolding with single crystallinity and controlled diameters down to 4…
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Semiconductor Engineering broke the news on Monday, July 20, 2026.
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