US EditionFormer Samsung Electronics Researcher Jailed for Leaking Chip Technology to Chinese Firm
The court said the leaked DRAM process data helped CXMT and involved a former Samsung official, with the defendant receiving about 2.9 billion won, prosecutors said.
- On Wednesday, The Seoul Central District Court sentenced a former Samsung Electronics researcher to seven years in prison for leaking DRAM semiconductor manufacturing technology to Chinese chipmaker ChangXin Memory Technologies .
- Authorities indicted the defendant last year alongside nine others for transferring proprietary data that allegedly helped China develop high-bandwidth memory , a critical component for artificial intelligence computing.
- Yonhap News Agency reported the defendant received about 2.9 billion won from CXMT over six years. The court ruled the leaked data constituted protected national core technology, finding the defendant conspired in the breach.
- Samsung Electronics declined to comment on the verdict, while CXMT did not immediately respond to requests for comment. The Chinese chipmaker previously announced plans to raise $4.33 billion through an initial public offering in Shanghai.
- The ruling reflects South Korea's enforcement of the Industrial Technology Protection Act to secure critical domestic innovations. Authorities continue investigating security breaches within the semiconductor industry to prevent further unauthorized transfers of national core technology.
12 Articles
12 Articles
Former Samsung Researcher Jailed for Leaking Chip Tech to China
The Seoul Central District Court on Wednesday announced that a former researcher for South Korean electronics giant Samsung has been sentenced to seven years in prison for leaking chip technology to China’s ChangXin Memory Technologies (CXMT). The post Former Samsung Researcher Jailed for Leaking Chip Tech to China appeared first on Breitbart.
Former Samsung researcher sentenced to seven years for leaking chip technology to Chinese firm CXMT
Seoul: A South Korean court said on Wednesday it had sentenced a former researcher at Samsung Electronics to seven years in prison for leaking semiconductor technology to a Chinese company.The Seoul Central District Court found the defendant, identified only by his surname, guilty of violating the Industrial Technology Protection Act, ruling that the leaked data constituted a national core technology and that he had conspired in the breach.T…
Former Samsung Electronics Researcher Sentenced to 7 Years in Prison in First Instance for Leaking Core Semiconductor Technology to China A former Samsung Electronics researcher, indicted on charges of leaking core semiconductor technology to a Chinese competitor, was sentenced to prison in the first instance. On the 22nd, Han Dae-gyun, Presiding Judge of the 28th Criminal Division of the Seoul Central District Court, ruled on the charges of lea…
Former Samsung Electronics researcher sentenced to 7-year prison term for leaking DRAM trade secrets
A former researcher at Samsung Electronics was sentenced to seven years in prison on April 22 by a South Korean court for leaking core semiconductor trade secrets to a Chinese competitor. The case highlights how chip-making technology is increasingly regarded by governments as a national security asset under strict protection.
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