CXMT Targets 2026 Debut of 4F² DDR5 RDIMM in Bid to Challenge Server DRAM Rivals
9 Articles
9 Articles
(Shanghai=Yonhap News) Correspondent Cha Byeong-seop = Changxin Memory (CXMT), considered the 'vanguard' of China's semiconductor self-reliance, has made new progress in DRAM memory technology...
CXMT plans next-generation DDR5 server memory using denser DRAM architecture · TechNode
Chinese memory maker CXMT plans to launch a new generation of DDR5 registered memory modules by the end of 2026 using its 4F² DRAM architecture. President Cao Kanyu outlined the technology at an industry conference on October 10, positioning server memory as the first product application for the new architecture. The design reduces the area […]
CXMT targets 2026 debut of 4F² DDR5 RDIMM in bid to challenge server DRAM rivals
China's ChangXin Memory Technologies (CXMT) plans to introduce DDR5 registered DIMMs (RDIMMs) based on its new 4F² DRAM architecture by the end of 2026, advancing its efforts to increase memory density and compete in the higher-value server market.
China’s CXMT makes progress in chip design pursued by Samsung, SK Hynix
Chinese memory chip giant ChangXin Memory Technologies (CXMT) has reported “key progress” on a new cell architecture to boost memory density, an innovation that competitors such as Samsung Electronics and SK Hynix are also working on. CXMT planned to roll out a new server-memory product based on the structure by the end of 2026, president Cao Kanyu said at an industrial event in Shanghai over the weekend, according to a company statement. At the…
Chinese memory semiconductor company Changxin Memory Technology (CXMT) announced that it has made technological progress in the development of the '4F²' cell structure, considered a core technology for next-generation DRAM, and has introduced a new product applying this.
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