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Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers

The new device cuts power loss and heat generation as Toshiba prepares for mass production in fiscal 2026.

Summary by Montreal Gazette
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Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers

Open the article to view the coverage from Montreal Gazette

·Montreal, Canada
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Financial Post broke the news in Canada on Thursday, May 21, 2026.
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