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SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.5 and 34 mΩ SOT-227 Modules
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SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.5 and 34 mΩ SOT-227 Modules
November 13th, 2025, Lake Forest, CA – SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has expanded its family of 1200 V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer RDSon values of 7.4, 14.5, and 34 mΩ. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes (SBDs), have lower switching losses at high temper…
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