Samsung Reveals Next-Gen Memory with Stacked HBM and 400-Layer NAND
Samsung said zHBM could deliver about 8 times the performance of HBM5 while V10 BV-NAND boosts density by 58% over V9.
- At the Future of Memory and Storage 2026 conference in Santa Clara, California, Samsung unveiled V10 BV-NAND, the industry's first Bonding V-NAND architecture featuring more than 400 layers achieved through wafer bonding.
- Executive Vice President Jin-Yub Lee and Vice President Kyungryun Kim presented the keynote "Driving the Wave of AI Revolution: 3D Innovations in Memory & Storage Architecture," outlining strategies to maximize AI system performance and power efficiency.
- Samsung said V10 BV-NAND boosts memory density by about 58% compared with V9, while the company believes zHBM achieves more than 10 times the memory density of HBM5 with tripled energy efficiency.
- Distinct from traditional architectures, zHBM stacks directly on AI accelerators to minimize signal distance, improving bandwidth and efficiency, while zNAND-O targets edge AI applications requiring high space efficiency and low latency.
- Expanding its portfolio, Samsung showcased the LPDDR5X-PIM memory chip, the industry's first LPDDR memory with built-in data processing that performs computations within the memory itself to enhance bandwidth and power efficiency.
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(Seoul = Yonhap News) Reporter Kang Tae-woo = Samsung Electronics [discussed] next-generation memory technology at the 'FMS Awards' held during the global memory technology conference 'FMS 2026'.
Samsung showcases fast and efficient BV-NAND V10 storage, zHBM for AI accelerators
Samsung is showcasing a great variety of memory and storage technologies at its booth at the Future of Memory and Storage (FMS) 2026 event in Santa Clara, California. Thirteen years after it introduced the first V-NAND technology, Samsung is the first to unveil V10 of BV-NAND (Bonded V-NAND). This is a flash memory that has more than 400 layers and leverages Samsung’s advanced bonding technology to stack memory cells. V10 increases memory densit…
SANTA CLARA, California--(BUSINESS WIRE)--August 5, 2026-
Samsung reveals next-gen memory with stacked HBM and 400-layer NAND
At the Future of Memory and Storage 2026 conference in Santa Clara, California, the company laid out a roadmap built around three main technologies: a new Bonding V-NAND architecture with more than 400 layers, a concept for vertically stacked high-bandwidth memory called zHBM, and a next-generation NAND approach called zNAND-O....Read Entire Article
Samsung Stacks High-bandwidth Memory Chips on Top of AI Chips in 3D Memory Push, Promises Up to Eightfold Performance
Get latest articles and stories on Business at LatestLY. Samsung Electronics is placing high-bandwidth memory directly on top of AI processors as part of a 3D memory architecture push designed to lower power consumption and deliver faster data transfers, according to a news report by The Korea Herald. Business News | Samsung Stacks High-bandwidth Memory Chips on Top of AI Chips in 3D Memory Push, Promises Up to Eightfold Performance.
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