US EditionR&D: Preliminary Results on Industrial 28nm FD-SOI Phase Change Memory at Cryogenic Temperature
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R&D: Preliminary Results on Industrial 28nm FD-SOI Phase Change Memory at Cryogenic Temperature
Solid-State Electronics has published an article written by Philippe Galy, STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France, Joao Henrique Quintino Palhares, STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France, Université Grenoble Alpes, CNRS, Grenoble INP, SPINTEC Grenoble, France, Institut quantique, Université de Sherbrooke, 2500 Boulevard de l’Université, Sherbrooke QC J1K 2R1, Canada, and Laboratoire […] The post R&…
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