US EditionR&D: Influence of Underlayer on Crystallization of Thin Ge-rich Ge–Sb–Te Films
Summary by StorageNewsletter
This story is only covered by news sources that have yet to be evaluated by the independent media monitoring agencies we use to assess the quality and reliability of news outlets on our platform. Learn more here.1 Articles
1 Articles
R&D: Influence of Underlayer on Crystallization of Thin Ge-rich Ge–Sb–Te Films
Journal of Applied Physics has published an article written by Philipp Hans, Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Marseille, France, Thomas Fernandes, Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Marseille, France, and STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France, Cristian Mocuta, Synchrotron SOLEIL, L’Orme des Merisiers, Départementale 128, 91190 […] The post R&D: Influence of Underlayer on Crystall…
Coverage Details
Total News Sources1
Leaning Left0Leaning Right0Center0Last UpdatedBias DistributionNo sources with tracked biases.
Bias Distribution
- There is no tracked Bias information for the sources covering this story.
Factuality
To view factuality data please Upgrade to Premium
