US EditionQuantum Transport in Nanosheet Gate-All-Around Transistors
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Quantum Transport in Nanosheet Gate-All-Around Transistors
In a groundbreaking advancement poised to reshape the landscape of nanoscale electronics, a team of researchers led by Kim, Park, and Jin has unveiled critical insights into quantum transport phenomena occurring within nanosheet gate-all-around (NS GAA) transistors. Published in the journal Communications Engineering in early 2025, their study delves deep into the intricate behavior of electrons as they traverse constricted pathways in these nex…
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