Non-Contact and Nanometer-Scale Measurement of Shallow PN Junction Depth Buried in Si Wafers

Non-Contact and Nanometer-Scale Measurement of Shallow PN Junction Depth Buried in Si Wafers

An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si wafer in a non-destructive and non-contact manner by observing the THz waves generated by irradiating a Si wafer with a femtosecond laser. The technique will open new avenues for developing advanced semiconductor devices, such as 3D LSI, and provide a comprehensive measurement solution that enables non-contact testing in se

Non-contact and nanometer-scale measurement of shallow PN junction depth buried in Si wafers - Journal of Cyber Policy

a, Schematic illustration of the buried channel transistor structure. b, THz emission from the PN junction. Ultrafast photocarrier transport due to the built-in electric field (drift current) generates the THz electromagnetic waves at the PN junction. c, GA, UNITED STATES, June 21, 2025 /EINPresswire.com/ — An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si wafer in a non-…