NEO Semiconductor Unveils Breakthrough 1T1C and 3T0C IGZO-Based 3D X-DRAM Technology

NEO Semiconductor Unveils Breakthrough 1T1C and 3T0C IGZO-Based 3D X-DRAM Technology - Semiconductor Digest

Built on a 3D NAND-like architecture and with proof-of-concept test chips expected in 2026, the new 1T1C and 3T0C designs combine the performance of DRAM with the manufacturability of NAND, enabling cost-effective, high-yield production with densities up to 512Gb — a 10x improvement over conventional DRAM.

NEO Semiconductor Unveils 1T1C and 3T0C IGZO-Based 3D X-DRAM Technology

NEO Semiconductor announced the latest advancement in its 3D X-DRAM technology family — the industry-first 1T1C- and 3T0C-based 3D X-DRAM cell, a transformative solution designed to deliver unprecedented density, power efficiency, and scalability for the most demanding data applications. The company unveils a breakthrough 1T1C-type 3D X-DRAM cell – delivering up to 512 Gb density, […] The post NEO Semiconductor Unveils 1T1C and 3T0C IGZO-Based 3…

Neo Semiconductor introduces IGZO-based 3D X-DRAM technology

NEO Semiconductor announced the latest advancement in its groundbreaking 3D X-DRAM technology family — the industry-first 1T1C- and 3T0C-based 3D X-DRAM cell, a transformative solution designed to deliver unprecedented density, power efficiency, and scalability for the most demanding data applications. NEO Semiconductor unveils a breakthrough 1T1C-type 3D X-DRAM cell—delivering up to 512 Gb density, 10ns fast read/write speed, and over 450 secon…

Discussion - 3D X-DRAM aims for 10x capacity of today's...

toms hardware article link NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The one-transistor-one-capacitor and three-transistor-zero-capacitor designs are expected to see proof-of-concept test chips produced in 2026, and will offer 10x the capacity of normal DRAM modules. Based on NEO’s exis…

NEO Semiconductor Unveils Breakthrough 1T1C and 3T0C IGZO-Based 3D X-DRAM Technology

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the latest advancement in its groundbreaking 3D X-DRAM technology family—the industry-first 1T1C- and 3T0C-based 3D X-DRAM cell, a transformative solution designed to deliver unprecedented density, power efficiency, and scalability for the most demanding data applications. Built on a 3D NAND-like architecture and with proof-of…