Infineon to Start 300 mm GaN Wafer Production as TSMC Exits Market
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Infineon to Start 300 mm GaN Wafer Production as TSMC Exits Market
Infineon has announced that its gallium nitride (GaN) power semiconductor production is on schedule, confirming that its 300 mm wafer fab will deliver customer samples in Q4 2025. The German semiconductor manufacturer becomes the first company to successfully integrate 300 mm GaN wafer technology into its existing high-volume production infrastructure, achieving a 2.3x higher chip yield per wafer compared to conventional 200 mm processes. Infine…
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