Freestanding hafnium zirconium oxide membranes can enable advanced 2D transistors

Freestanding hafnium zirconium oxide membranes can enable advanced 2D transistors

To further reduce the size of electronic devices, while also improving their performance and energy efficiency, electronics engineers have been trying to identify alternative materials that outperform silicon and other conventional semiconductors. Two-dimensional (2D) semiconductors, materials that are just a few atoms thick and have a tunable electrical conductivity, are among the most promising candidates for the fabrication of smaller and bet…

Freestanding hafnium zirconium oxide membranes can enable advanced 2D transistors - Science Tech Updates

To further reduce the size of electronic devices, while also improving their performance and energy efficiency, electronics engineers have been trying to identify alternative materials that outperform silicon and other conventional semiconductors. Two-dimensional (2D) semiconductors, materials that are just a few atoms thick and have a tunable electrical conductivity, are among the most promising candidates […] The post Freestanding hafnium zirc…