New graphene-based flash memory writes data in 400 picoseconds, shattering all speed records
9 Articles
9 Articles


China Develops Flash Memory 10,000x Faster With 400-Picosecond Speed
Longtime Slashdot reader hackingbear shares a report from Interesting Engineering: A research team at Fudan University in Shanghai, China has built the fastest semiconductor storage device ever reported, a nonvolatile flash memory dubbed "PoX" that programs a single bit in 400 picoseconds (0.0000000...
China's Fudan University Develops Smallest, Fastest Flash Memory Device
Researchers at Fudan University have announced a breakthrough in flash memory technology with what they claim is the fastest device ever created. Dubbed “Poxiao” (“Dawn”) – or PoX for short – the prototype is said to be smaller than a grain of rice, and is capable of erasing and rewriting data in just 400 picoseconds, or one trillionth of a second. The university notes that this research was also recently published in academic journal Nature. Th…
Coverage Details
Bias Distribution
- 100% of the sources are Center
To view factuality data please Upgrade to Premium
Ownership
To view ownership data please Upgrade to Vantage