Samsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year
8 Articles
8 Articles
HBM to claim larger share of DRAM capacity
High-bandwidth memory (HBM) could account for nearly 30% of total wafer capacity allocated by DRAM manufacturers next year, up from roughly 20% today, according to a Samsung Electronics executive. Samsung Executive Vice-President Kim Taewoo said HBM and conventional DRAM rely on the same wafer capacity, meaning continued growth in HBM production could put additional pressure on supplies of standard memory. HBM has become a key technology for AI …
With the growing demand for AI memory, the proportion of HBM in DRAM production is expected to reach 30% next year. Consequently, concerns are rising regarding a supply shortage and price increases for standard products, leading Samsung Electronics and SK Hynix to engage in fierce competition for market share to secure the next-generation HBM4 market.
As far as Samsung is concerned, almost one third of the world's built-in memory will be exclusively so-called "HBM", i.e. special memory, which is installed in AI databases. This is not good news for PC users. (Continue reading)
HBM to account for nearly 30% of DRAM wafer capacity in 2027, Samsung
A Samsung Electronics executive said on Tuesday that high-bandwidth memory (HBM) is expected to account for nearly 30% of Dynamic Random-Access Memory (DRAM) chipmakers’ total wafer capacity next year, up from about 20% currently. Samsung Electronics Executive Vice President Kim Taewoo said HBM and standard DRAM compete for the same wafer capacity, meaning expanding HBM […]
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