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R&D: Achieving 10-year Data Retention in Single Electron Memory, design Pathway using Metal Nanocrystals and High-Dielectrics
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R&D: Achieving 10-year Data Retention in Single Electron Memory, design Pathway using Metal Nanocrystals and High-Dielectrics
Sensors and Actuators A: Physical has published an article written by Amine Touati, Faculty of Sciences of Monastir, University of Monastir, 5019 Monastir, Tunisia, Hamed Dehdashti Jahromi, Department of Electrical Engineering, College of Engineering, Jahrom University, Jahrom, Iran, Nabil Zeiri, Laboratory of Condensed Matter and Nanosciences (LMCN), Department of Physics, Faculty of Sciences of Monastir, […] The post R&D: Achieving 10-year Dat…
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