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onsemi and Innoscience Announce Plans to Collaborate to Speed Global Rollout of GaN Power Portfolio
The MoU aims to combine onsemi’s system expertise with Innoscience’s wafer manufacturing to scale GaN power devices addressing a $2.9 billion market by 2030.
- Onsemi and Innoscience signed a non-binding MoU from Scottsdale, Arizona and Suzhou, China to evaluate scaling GaN devices starting with 40-200V, targeting a $2.9 billion market by 2030.
- Industry constraints prompted the companies to pursue a strategic collaboration, combining onsemi's packaging and systems expertise with Innoscience's wafer manufacturing to overcome cost and wafer supply constraints in the low and medium-voltage GaN segment.
- Together, the partners expect their technologies to enable smaller, more efficient GaN solutions for industrial, automotive, telecom infrastructure, consumer and AI data center markets.
- Onsemi expects to begin product sampling, marking a commercialization step, while the MoU targets rapid prototyping and scalable manufacturing to speed market entry and reduce system cost for customers and power system integrators.
- This expanded portfolio strengthens onsemi's position amid electrification and AI demand, but all forward-looking statements and associated risks qualify the collaboration's potential outcomes.
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12 Articles
Onsemi and Innoscience sign MoU to explore expanded GaN power device production
Onsemi and Innoscience have signed a memorandum of understanding to assess opportunities for expanding the manufacturing of gallium nitride (GaN) power devices, with a focus on accelerating deployment in the 40–200V segment. The companies said the non-binding agreement aims to combine Onsemi's packaging, drivers, and system-integration capabilities with Innoscience's 8-inch GaN-on-silicon wafer technology and high-volume production capacity.
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Total News Sources12
Leaning Left7Leaning Right1Center3Last UpdatedBias Distribution64% Left
Bias Distribution
- 64% of the sources lean Left
64% Left
L 64%
C 27%
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