Selectively Demarcating and Modifying Defects in Two-Dimensional Semiconductors in a 300 mm Fab

Selectively Demarcating and Modifying Defects in Two-Dimensional Semiconductors in a 300 mm Fab

Defects intrinsic to synthetic transition metal dichalcogenide (TMD) monolayers, such as bilayer islands, grain boundaries, and point defects, degrade performance of future electronic and optical devices based on these novel semiconductors. Such defect types are often both difficult to detect ...