The memory design uses through-silicon vias to stack NAND in four- or eight-layer configurations, shortening data paths and improving speed and power efficiency.
This story is only covered by news sources that have yet to be evaluated by the independent media monitoring agencies we use to assess the quality and reliability of news outlets on our platform. Learn more here.
Samsung works at zNAND-O, zNAND-T and zNAND-I, NAND technologies optimized for reduced consumption, bandwidth and IOPS. Just zNAND-O has been officially announced so far.
Samsung Electronics would be developing zNAND-T and zNAND-I for different artificial intelligence needs: one variant focused on reading and writing performance and another on random operations, according to a report by ZDNET Korea.