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Samsung Electronics Shows zNAND-O Design for Edge AI Workloads

Summary by TokenPost
The memory design uses through-silicon vias to stack NAND in four- or eight-layer configurations, shortening data paths and improving speed and power efficiency.
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4 Articles

Samsung works at zNAND-O, zNAND-T and zNAND-I, NAND technologies optimized for reduced consumption, bandwidth and IOPS. Just zNAND-O has been officially announced so far.

Samsung is developing three new Z-NAND memory technologies for artificial intelligence infrastructure.

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Samsung Electronics would be developing zNAND-T and zNAND-I for different artificial intelligence needs: one variant focused on reading and writing performance and another on random operations, according to a report by ZDNET Korea.

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TokenPost broke the news on Monday, October 12, 2026.
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