Samsung Allocates More than Half of 4nm Foundry Capacity to HBM4

Samsung allocates more than half of 4nm foundry capacity to HBM4

Samsung Electronics is allocating more than half of its 4nm foundry capacity to base dies for sixth-generation high-bandwidth memory (HBM4) as it accelerates shipments to major AI chip customers. The share is estimated at 50–60% as of August, according to .

Report: Samsung's 4nm lines run at full tilt as HBM4 chips eat up to 60% of foundry output

With the high demand for high bandwidth memory (HBM) outpacing supply, Samsung Electronics has reportedly allocated more than 50% of its 4-nanometer capacity to making the memory chips. The report comes courtesy of ZDNet Korea, and it concerns the base die for the memory chips. As opposed to the HBM DRAM modules, which are fabricated with custom manufacturing nodes, the base die is fabricated using technologies used to build logic chips. Samsung…

Samsung Foundry Allocates Half of 4 nm Capacity for HBM4 Base Dies

According to Korean media, Samsung Foundry, a division that operates silicon manufacturing as a subsidiary of Samsung Electronics, is reportedly allocating significant capacity for HBM4 base die manufacturing. For HBM4, Samsung is producing the base die on a 4 nm node, which reportedly receives half of the entire manufacturing capacity of the 4 nm node, internally referred to as SF4. Customers of HBM4 and the upcoming HBM4E memory standards are …