DARPA and BAE Systems advances effort to make next-gen GaN electronics

DARPA and BAE Systems advances effort to make next-gen GaN electronics

BAE Systems is moving into the second phase of a DARPA program aimed at solving one of the most persistent limitations in high-power radio-frequency electronics. Heat. BAE Systems’ FAST Labs research organization has completed Phase 1 of DARPA’s Technologies for Heat Removal in Electronics at the Device Scale (THREADS) program and has been selected to continue into Phase 2. The work focuses particularly on gallium nitride (GaN) devices, which ar…

BAE Systems advances DARPA THREADS effort to Phase 2, targeting nearly threefold range increase for military RF systems

The company’s FAST Labs research, development and production organization completed Phase 1 of DARPA’s Technologies for Heat Removal in Electronics at the Device Scale, or THREADS, program. BAE Systems has now received continued support to advance the work into Phase 2. THREADS is focused on addressing temperature limitations in high-performance RF electronics, particularly gallium nitride, or GaN, devices. The program is seeking material and pr…